SMG2302N 3.4 a, 20 v, r ds(on) 76 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-feb-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper lead frame sc-59 saves board space. ? fast switching speed. ? high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. package information package mpq leadersize sc-59 3k 7? inch absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol ratings unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current 1 i d @ t a =25 c i d 3.4 a i d @ t a =70 c2.2 a pulsed drain current 2 i dm 10 a continuous source current (diode conduction) 1 i s 1.6 a power dissipation 1 p d @ t a =25 c p d 1.25 w p d @ t a =70 c0.8 w operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings maximum junction to ambient 1 t Q 5 sec r ? ja 100 c / w steady state 166 notes: 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. top view a l c b d g h j f k e 1 2 3 1 2 3 sc-59 ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 ? ? ? ? ? ?
SMG2302N 3.4 a, 20 v, r ds(on) 76 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-feb-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) 0.7 0.8 1.2 v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =8v zero gate voltage drain current i dss - - 1 a v ds =16v, v gs =0 - - 10 v ds =20v, v gs = 0, t j = 55 c on-state drain current 1 i d(on) 7 - - a v ds =5v, v gs =4.5v drain-source on-resistance 1 r ds(on) - - 76 m ? v gs =4.5v, i d =3.4a - - 103 v gs =2.5v, i d =2.9a forward transconductance 1 g fs - 7 - s v ds =5v, i d =1.5a diode forward voltage v sd - 0.7 - v i s =1.6a, v gs =0 dynamic 2 total gate charge q g - 3.5 - nc v ds =10v, v gs =4.5v, i d =3.4a gate-source charge q gs - 0.55 - gate-drain charge q gd - 0.95 - input capacitance c iss - 815 - pf v ds =15v, v gs =0, f=1mhz output capacitance c oss - 175 - reverse transfer capacitance c rss - 106 - turn-on delay time t d(on) - 5 - ns v dd =10v, v gen =4.5v, r l =6 ? , r g =6 ? rise time t r - 8 - turn-off delay time t d(off) - 11 - fall time t f - 3 - notes: 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not s ubject to production testing.
SMG2302N 3.4 a, 20 v, r ds(on) 76 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-feb-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
SMG2302N 3.4 a, 20 v, r ds(on) 76 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-feb-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
|
